کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1462035 989627 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications
چکیده انگلیسی
Bi2Zn2/3Nb4/3O7 thin films were deposited at room temperature on Pt/Ti/SiO2/Si(1 0 0) and polymer-based copper clad laminate (CCL) substrates by pulsed laser deposition. Bi2Zn2/3Nb4/3O7 thin films were deposited in situ with no intentional heating under an oxygen pressure of 4 Pa and then post-annealed at 150 °C for 20 min. It was found that the films are still amorphous in nature, which was confirmed by the XRD analysis. It has been shown that the surface roughness of the substrates has a significant influence on the electrical properties of the dielectric films, especially on the leakage current. Bi2Zn2/3Nb4/3O7 thin films deposited on Pt/Ti/SiO2/Si(1 0 0) substrates exhibit superior dielectric characteristics. The dielectric constant and loss tangent are 59.8 and 0.008 at 10 kHz, respectively. Leakage current density is 2.5 × 10−7 A/cm2 at an applied electric field of 400 kV/cm. Bi2Zn2/3Nb4/3O7 thin films deposited on CCL substrates exhibit the dielectric constant of 60 and loss tangent of 0.018, respectively. Leakage current density is less than 1 × 10−6 A/cm2 at 200 kV/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 38, Supplement 1, January 2012, Pages S73-S77
نویسندگان
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