کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1462038 | 989627 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solution-based fabrication and electrical properties of CaBi4Ti4O15 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ferroelectric CaBi4Ti4O15 (CBT) thin films were prepared by spin coating technology using solution-based fabrication. The as-deposited CBT thin films were crystallized below 600 °C and the layered perovskite were crystallized at 700 °C using CFA processing in air. The enhancement of ferroelectric properties in CBT thin films for MFIS structures were investigated and discussed. Compared the Bi4Ti3O12 (BIT), the CBT showed the better physical and electrical characteristics. The 700 °C annealed CBT thin films on SiO2/Si substrate showed random orientation and exhibited large memory window curves. The maximum capacitance, memory window and leakage current density were about 250 pF, 2 V, and 10−5 A/cm2, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 38, Supplement 1, January 2012, Pages S87–S90
Journal: Ceramics International - Volume 38, Supplement 1, January 2012, Pages S87–S90
نویسندگان
Chien-Min Cheng, Kai-Huang Chen, Jen-Hwan Tsai, Chia-Lin Wu,