Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

0.95Pb(Sc0.5Ta0.5)O3–0.05%PbTiO3 (PSTT5) thin films with and without a Pb(Zr0.52,Ti0.48)O3 (PZT52/48) seed layer were deposited on Pt/Ti/SiO2/Si(1 0 0) substrates by RF magnetron sputtering. X-ray diffraction patterns indicate that the PSTT5 film with a PZT52/48 seed layer exhibited nearly pure perovskite crystalline phase with highly (4 0 0)-preferred orientation. Piezoresponse force microscopy observations reveal that a large out-of-plane spontaneous polarization exists in the highly (4 0 0)-oriented PSTT5 thin film. The PSTT5/PZT(52/48) possesses good ferroelectric properties with large remnant polarization Pr (12 μC/cm2) and low coercive field Ec (110 kV/cm). Moreover, The perfect butterfly-shaped capacitance–voltage characteristic curve and the relative dielectric constant as high as 733 is obtained in this PSTT5 thin film at 100 kHz.