Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering

BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer (BSTM) thin films and BaSrTiO3 (BST) thin films were deposited on LaNiO3 (LNO)/SiO2/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations revealed that all the films have uniform and crack-free surface morphology with a perovskite structure. The dielectric constant of the BSTM thin films was increased and dielectric loss was decreased compared with those of uniform BST thin films. The dielectric constant of 420, dielectric loss of 0.017, and dielectric tunability of 38% were achieved for the BSTM thin films.