Temperature field and residual stress analysis of multilayer pyroelectric thin film

The two-dimensional finite element model was built for the multilayer pyroelectric thin film. The temperature field and residual stress were simulated. The results show that porous silica film as a thermal-insulation layer and a reasonable model structure are effective for decreasing the heat loss. The silicon substrate and pyroelectric thin film that influence the temperature variation rate in pyroelectric thin film are also discussed. The annealing temperature and model structure have significant influence on residual stresses of pyroelectric thin film. The residual stresses increase rapidly with the increase of annealing temperature. The scanning electron microscopy (SEM) is employed to investigate the morphology of the pyroelectric thin film. The results show that the pyroelectric thin film annealed at 750 °C has a crack structure.