Microstructural analysis of single crystal SiC prepared by novel liquid phase epitaxy

Single crystal SiC has been synthesized by a novel liquid phase epitaxy using mixture of (Sm:Co) as unique solvent. The synthesized high quality crystals have been characterized by field emission gun scanning electron microscopy and field emission gun transmission electron microscopy. The above analysis shows the epitaxial growth of single crystal SiC along [1 1 1] direction parallel to the Si wafer, followed by polycrystalline 3C–SiC and 6H–SiC whiskers. The formation mechanisms of single crystal SiC and SiC whiskers have been proposed.