Effect of silica doping on the densification and grain growth in zinc oxide

The ability of silica (SiO2) in controlling the densification and grain growth behavior of nano crystalline zinc oxide (ZnO) has been systematically studied. It has been observed that SiO2 acts as a sintering inhibitor in the ZnO–SiO2 system up to 4 wt.% limiting value beyond which densification behavior of the system remains almost unchanged, especially above 1100 °C. The addition of SiO2 to ZnO retards grain growth which in turn results a finer ultimate grain size as compared to the undoped ZnO. However, stabilization in grain size occurs at ≥4 wt.% SiO2 addition. It has been observed that SiO2 incorporation changes the grain growth mechanism up to 4 wt.% addition, beyond which no remarkable changes was noticed. The grain growth (n) shows distinctly different slopes as a function of sintering time for the SiO2 doped ZnO systems than undoped ZnO. The different slopes tend to indicate that different diffusion mechanisms and probably the formation of a secondary phase (Zn–Si–O) at the grain boundary control the densification and grain growth. The thermal expansion coefficient of the system has been found to decrease substantially beyond 4 wt.% SiO2 addition to ZnO.