کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1463879 | 989652 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low dielectric loss and enhanced tunability of Ba(Zr0.3Ti0.7)O3-based thin film by sol–gel method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low dielectric loss and enhanced tunability of Ba(Zr0.3Ti0.7)O3-based thin film by sol–gel method Low dielectric loss and enhanced tunability of Ba(Zr0.3Ti0.7)O3-based thin film by sol–gel method](/preview/png/1463879.png)
چکیده انگلیسی
In this work, dopants and buffer layers were employed to simultaneously lower the dielectric loss and enhance the dielectric tunability of Ba(Zr0.3Ti0.7)O3 (BZT) thin films. The BZT, 1 mol% La doping BZT (BZTL) with and without La0.5Sr0.5CoO3 (LSCO) buffer layers were prepared by sol–gel technique. The dielectric properties of the thin films were investigated as a function of frequency and current bias field. As a result, the BZTL thin film with LSCO buffer layer showed lower dielectric loss and higher tunability simultaneously, which can be a promising candidate for tunable microwave device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 34, Issue 4, May 2008, Pages 1023–1026
Journal: Ceramics International - Volume 34, Issue 4, May 2008, Pages 1023–1026
نویسندگان
Lina Gao, Jiwei Zhai, Xi Yao,