Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method

Fe-doped Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on Pt/Ti/SiO2/Si substrate using the sol–gel method. The structural and surface morphology, dielectric, and leakage current properties of undoped and 1 mol% and 2 mol% Fe-doped BST thin films have been studied in detail. The results demonstrate that the Fe-doped BST films exhibit improved dielectric loss, tunability, and leakage current characteristics as compared to the undoped BST thin films. The improved figure of merit (FOM) of Fe-doped BST thin film suggests a strong potential for utilization in microwave tunable devices.