Heteroepitaxial ZnO/sapphire (0 0 0 1) structure prepared by sol–gel process

ZnO thin films were grown on sapphire (0 0 0 1) substrates by sol–gel process and their structural and optical properties were characterized in detail. High-quality texture was obtained by using precursor solution of zinc acetate and ethanolamine in 2-methoxyethanol, pyrolyzed at 300 °C, then heated at 500 °C, and finally annealed at 750 °C. Highly c-axis oriented ZnO films were confirmed by X-ray θ–2θ scan. A relatively high transmittance in the visible spectra range and clear absorption edge of the film were observed. Epitaxial relationship between ZnO and sapphire and photoluminescence of the film were examined by using a X-ray pole-figure analysis and He–Cd laser. Near-band-edge emission with a deep-level emission was observed.