Total hemispherical radiation properties of oxidized nickel at high temperatures

• Scale-growth kinetics of nickel oxide film formed on nickel at 900 °C was analyzed.
• Total hemispherical emissivity of oxidized nickel was measured at high temperatures.
• Relationship between emissivity and oxide film scale at various temperatures.
• Provide reference data for radiation properties of high-temperature metal oxides.

It is important to quantify the effect of oxide film on the total hemispherical radiation properties. This paper investigated the radiation properties of high-temperature oxidized 99.9% purity nickel. The scale-growth kinetics of nickel oxide film formed on nickel at oxidation temperature of 900 °C was analyzed. The apparent total hemispherical emissivities of oxidized nickel with various oxide film thicknesses were measured at high temperatures using a steady-state calorimetric technique. The dependence between the total hemispherical emissivity and oxide scale at various temperatures was determined.