کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1475649 991124 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition
چکیده انگلیسی

The influence of B2O3–CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO4 ceramic have been investigated. The BiSbO4 ceramics can be well densified to approach above 95% theoretical density in the sintering temperature range from 840 to 960 °C as the addition amount of B2O3–CuO increases from 0.6 to 1.2 wt.%. Sintered ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The microwave permittivity ɛr saturated at 19–20 and Qf values varied between 33,000 and 46,000 GHz while temperature coefficient of resonant frequency shifting between −70 and −60 ppm/°C at sintering temperature around 930 °C. Lowering sintering temperature of BiSbO4 ceramics makes it possible for application in low temperature co-fired ceramic technology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 29, Issue 8, May 2009, Pages 1543–1546
نویسندگان
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