کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1477295 991178 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Large-scale AlN nanowires synthesized by direct sublimation method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Large-scale AlN nanowires synthesized by direct sublimation method
چکیده انگلیسی

Hexagonal aluminum nitride (AlN) nanowires were fabricated by direct sublimation method without a catalyst layer. The obtained nanowires have diameters of about 30–100 nm and length up to tens of micrometers. TEM observation indicates that these nanowires are single-crystalline and grow along [0 0 0 1] direction. It is thought that vapor–solid (VS) mechanism should be responsible for the growth of AlN nanowires. In addition, room temperature Raman scattering and photoluminescence spectra from AlN nanowires were studied. Photoluminence spectrum of the AlN nanowires shows a wide emission band centered of 517 and 590 nm, which is related to N vacancies and the transition from the level of VN+ to ground state of the deep level of [VAl3− + 3ON+] defects, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 29, Issue 1, January 2009, Pages 195–200
نویسندگان
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