کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1481681 991538 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers
چکیده انگلیسی

Si quantum dots (Si QDs) films were prepared by annealing amorphous SiC single layer and amorphous Si/SiC multilayers fabricated in plasma enhanced chemical vapor deposition system. The microstructures were characterized by Raman spectroscopy as well as Fourier transforms infrared spectroscopy for both samples. It was found that Si QDs with average size of 2.7 nm were formed after annealing and the electroluminescence (EL) band centered at 650 nm can be observed at room temperature. The EL intensity from the Si/SiC multilayers was obviously improved by one order of magnitude and the corresponding EL band width was reduced compared with that from SiC single layer film. The improved electroluminescence behavior can be attributed to the formation of the denser Si QDs, good size distribution and the strong confinement effect of carriers in multilayerd structures.


► Si QDs can be formed in a-SiC single layer and a-Si/SiC multilayers (MLs).
► Si QDs has higher density and better size distribution in Si/SiC MLs.
► EL (intensity and FWHM) was improved in the Si/SiC MLs.
► EL is originated from radiative recombination of e-h pairs in Si QDs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 17, 1 September 2012, Pages 2114–2117
نویسندگان
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