کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1481693 | 991538 | 2012 | 4 صفحه PDF | دانلود رایگان |
We report the rapid thermal crystallization of silicon films using infrared semiconductor laser. Carbon films were used on silicon films to absorb the laser light. Uniform crystalline regions were achieved by a line shape laser beam with a length of 20 μm. Polycrystalline silicon thin film transistors were fabricated in crystallized regions. The effective electron carrier mobility and threshold voltage were achieved to be 130 cm2/Vs and 0.4 V, respectively, when the crystalline volume ratio of the silicon films was 0.95.
► Rapid 976-nm semiconductor laser heating was developed for about 20 μs.
► 40-nm-thick amorphous silicon films were successfully crystallized.
► A crystalline volume ratio of 0.95 was achieved by the heating for 25 μs.
► Polycrystalline thin film transistors were fabricated in the crystallized films.
► The carrier mobility and threshold voltage were achieved to be 130 cm2/Vs and 0.4 V.
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 17, 1 September 2012, Pages 2162–2165