Influence of the deposition parameters on the microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon films by HW-CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared at high deposition rates (> 13 Å/s) from pure silane without hydrogen dilution by hot wire deposition method by varying filament-to-substrate distance (ds–f). In this study we have systematically and carefully investigated the effect of filament-to-substrate distance on structural, optical and electrical properties of the Si:H films. A variety of characterization techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM), UV–Visible-NIR spectroscopy and electrical dark and photoconductivity measurement were used to characterize these films. Films deposited at ds–f > 5 cm are amorphous while those deposited at ds–f < 5 cm are biphasic; a crystalline phase and an amorphous phase with nano-sized crystallites embedded in it. Low angle X-ray diffraction analysis showed that the crystallites in the films have preferential orientation along (111) directions. Decrease in ds–f, the crystallinity and crystalline size increases whereas hydrogen bonding shifts from mono-hydride (SiH) to di-hydride (SiH2) and poly-hydride (SiH2)n complexes. The band gaps of nc-Si:H films (~ 1.9–2.0 eV) are high compared to the a-Si:H films, while hydrogen content remains < 10 at.%. We attribute the high band gap to the quantum size effect. A correlation between electrical and structural properties has been established. Finally, from the present study it has been concluded that the filament-to-substrate distance is a key process parameter to induce the crystallinity in the films by hot wire method. The ease of depositing films with variable crystallite size and its volume fraction, and tunable band gap is useful for fabrication of tandem/micro-morph solar cells.

► Filament-to-substrate distance is a key process parameter in HW-CVD to induce crystallinity in the films.
► Synthesis of nc-Si:H films without hydrogen dilution silane with at high deposition rates.
► Increase in volume fraction of crystallites and its size with decrease in filament-to-substrate distance.
► Reducing filament-to-substrate distance, H bonding shifts from Si-H to Si-H2 and (Si-H2)n complexes.
► High band gap at low hydrogen content may attribute to quantum size effect.