کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1482341 991563 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique
چکیده انگلیسی

In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si―K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement.

Highlight
► Structural analysis of SiOx films deposited by the Pulsed Electron Beam Ablation.
► This technique produces films at room temperature.
► It produced Si-rich SiOx films using targets made of Si/SiO2 powder mixtures.
► Photoluminescence was obtained as result at visible range.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 5, 1 March 2012, Pages 880–884
نویسندگان
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