کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1482341 | 991563 | 2012 | 5 صفحه PDF | دانلود رایگان |

In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si―K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement.
Highlight
► Structural analysis of SiOx films deposited by the Pulsed Electron Beam Ablation.
► This technique produces films at room temperature.
► It produced Si-rich SiOx films using targets made of Si/SiO2 powder mixtures.
► Photoluminescence was obtained as result at visible range.
Journal: Journal of Non-Crystalline Solids - Volume 358, Issue 5, 1 March 2012, Pages 880–884