کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1483122 | 1510527 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD](/preview/png/1483122.png)
چکیده انگلیسی
a-Si1âxCx:H films are deposited by RF plasma enhanced chemical vapor deposition (PECVD) at different RF powers with hydrogen-diluted silane and methane mixture as reactive gases. The structure and properties of the thin films are measured by infrared spectroscope (IR), Raman scattering spectroscope and ultra violet-visible transmission spectroscope (UV-vis), respectively. Results show that the optical band gap of the a-Si1âxCx:H thin films increases with increasing Si-C bond fraction. It can be easily controlled through controlling Si-C bond formed by modulating deposition power. At low deposition power, the bond configuration of the a-Si1âxCx:H thin film is more disordered owing to the distinct different bond lengths and bond strengths between Si and C atoms. At a too high deposition power, it becomes still high disordered due to dangling bonds appearing in the a-Si1âxCx:H thin film. The low disordered bond configuration appears in the thin film deposited with moderate deposition power density of about 2.5Â W/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 12â13, 15 February 2008, Pages 1435-1439
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 12â13, 15 February 2008, Pages 1435-1439
نویسندگان
Yiying Zhang, Piyi Du, Ran Zhang, Gaorong Han, Wenjian Weng,