کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1483473 991597 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature - An electron microscopic study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature - An electron microscopic study
چکیده انگلیسی
We investigated epitaxial silicon films deposited on differently oriented substrates by pulsed magnetron sputtering at temperatures of 500-550 °C. Our scanning and transmission electron microscopic as well as electron backscattering investigations show that epitaxial films grow not only on (1 0 0)-oriented substrates, but also on (2 1 0)-, (4 1 1)- and (3 1 1)-oriented ones. A change to the (1 0 0) orientation is found for the growth on (1 1 1)- , (3 2 1)- and close to (1 1 0)-oriented substrates. For these orientations transmission electron microscopic investigations show stacking faults, microtwins and small amorphous inclusions in a region starting at the substrate-film interface up to thicknesses of 150-200 nm. With increasing film thickness above 200 nm the crystalline perfection of the epitaxial layers improves.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 353, Issue 26, 1 August 2007, Pages 2550-2556
نویسندگان
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