کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1483824 | 1510548 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of pure ZnO thin films prepared by a direct photochemical method Characterization of pure ZnO thin films prepared by a direct photochemical method](/preview/png/1483824.png)
In this paper, amorphous ZnO thin films were obtained by direct UV irradiation of β-diketonate Zn(II) precursor complexes spin-coated on Si(1 0 0) and fused silica substrates. ZnO films were characterized by means of XPS, X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). These analyses revealed that as-deposited films are amorphous and have a rougher surface than thermally treated films. Optical characterization of the films showed that these are highly transparent in the visible spectrum with an average transmittance of up to 95% over 400 nm, and an optical band-gap energy of 3.21 eV for an as-deposited film, and 3.27 eV for a film annealed at 800 °C. Low resistivity values were obtained for the ZnO films (1.0 × 10−2 Ω cm) as determined by Van der Pauw four-point probe method.
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 38–39, 15 October 2006, Pages 4088–4092