Evaluation of structural and mechanical properties of aluminum oxide thin films deposited by a sol–gel process: Comparison of microwave to conventional anneal

Thin films of Al2O3 have been deposited on polished silica glass substrates at room temperature by sol–gel dip coating technique followed by two different exposure methods. One set was annealed at different temperatures ranging from 200 °C to 800 °C for 10 h and a second set was exposed to microwave (2.45 MHz) radiation at different powers for 10 min. The lower temperature and shorter time with microwave irradiation might be ascribed to the activating and facilitating effect of microwaves on solid phase diffusion. Unlike other preparation methods, microwave heating is generally quite faster, and energy efficient. X-ray diffraction (XRD) and scanning electron microscopy (SEM), energy dispersive X-ray analysis techniques have been employed to characterize structural, morphological and elemental compositions of the films. Adhesion strength failure measurements on films performed by scratch test in progressive loading sequence have shown critical loads up to 25 N (partial perforation) for both annealed films and films exposed to microwave irradiation. Nanohardness indentation tests of the films exposed (800 W) to microwave have shown hardness of 8.3 GPa with elastic modulus of 120 GPa compared to the conventional annealed film (800°) of 4.5 GPa with elastic modulus of 90 GPa.