کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1483971 1510514 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anisotropic luminescence photo-excitation in H2-loaded Ge-doped silica exposed to polarized 193 nm laser light
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Anisotropic luminescence photo-excitation in H2-loaded Ge-doped silica exposed to polarized 193 nm laser light
چکیده انگلیسی
We have investigated the polarization dependence of the photo-luminescence VUV excitation spectra in H2-loaded Ge-doped SiO2 glass exposed to polarized 193 nm laser light. As for non-H2-loaded Ge-doped silica, we show that the β band photo-luminescence excited in the VUV spectral range (6-9 eV) remains positively polarized. In our experiments, the polarization degree P is quite high (P ≈ 0.4) due to the preferential bleaching of polarized UV-exposure. As a result, we observe a highly anisotropic luminescence photo-excitation since the luminescence is mainly polarized in the writing laser polarization direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 355, Issues 18–21, 1 July 2009, Pages 1062-1065
نویسندگان
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