Photo-crystallization in a-Se imaging targets: Raman studies of competing effects

Photo-induced crystallization of a-Se is investigated by Raman spectroscopy as a function of temperature (250–340 K) and exposure time in thin-film structures used as targets in high-gain avalanche rushing photoconductor (HARP) video cameras. The Stokes-to-Antistokes ratio is monitored to obtain the local temperature Tloc at the laser spot; fluxes (632 nm) of 17 and 10 W/cm2 are used. We find a rich temperature behavior that reflects the competition of changes in viscosity and strain, and defines four distinct regimes. No photo-crystallization is seen for Tloc below 260 K, nor in a 15 K range around Tg ∼ 310 K. For Tloc in the regime 260–302 K the initial rate of crystal growth after onset of photo-crystallization is temperature independent, whereas for Tloc > 318 K the growth rate is thermally enhanced. Our results are in qualitative accord with a theory by Stephens treating the effects of local strain on the secondary growth of crystalline nuclei in a-Se. We conclude that the observed growth rate between 260 and 302 K is driven by local strain, and that relaxation of this strain near Tg suppresses crystal growth until thermally assisted processes accelerate the photo-crystallization at higher temperatures.