کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1484639 | 1510525 | 2008 | 12 صفحه PDF | دانلود رایگان |

Electrical transport and recombination mechanisms in hydrogenated amorphous silicon, a-Si:H, are determined by localized band-tail states and deep defects. At low temperatures (T < 100 K) the photoluminescence originates from tunneling recombination between localized band-tail states and the photoconductivity arises from hopping in the band tail. This review describes the present understanding of transport and recombination mechanisms in this low-temperature regime with a focus on two aspects: (i) the kinetics of carrier recombination and the competition between geminate and non-geminate recombination, and (ii) the microscopic identification of recombination paths by magnetic resonance techniques and the proof of excitonic recombination. Inspite of its complex nanocrystalline morphology, hydrogenated microcrystalline silicon, μc-Si:H, behaves in many respects similarly to a-Si:H in that the low-temperature properties are also determined by disorder-induced localized band-tail states.
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2067–2078