کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1484641 1510525 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deposition of microcrystalline silicon films at ultrafast rate by using a new microwave induced plasma source
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Deposition of microcrystalline silicon films at ultrafast rate by using a new microwave induced plasma source
چکیده انگلیسی

Synthesis of microcrystalline silicon (μc-Si) film at an ultrafast deposition rate over 100 nm/s is achieved from SiH4 + He by using a high density microwave plasma source even without employing H2 dilution and substrate heating techniques. Systematic deposition studies show that high SiH4 flow rate and working pressure increase film deposition rate while high He flow rate decreases the rate. On the other hand, crystallinity of deposited Si film decreases with increasing SiH4 or He flow rate and working pressure. Enhancements of gas phase and surface reactions during film deposition process are responsible for the achievement of high deposition rate and high film crystallinity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2083–2086
نویسندگان
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