کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1484657 1510525 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Light-induced changes in hydrogenated amorphous silicon solar cells deposited at the edge of crystallinity
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Light-induced changes in hydrogenated amorphous silicon solar cells deposited at the edge of crystallinity
چکیده انگلیسی
A series of hydrogenated amorphous silicon (a-Si:H) films were deposited in the transition region from amorphous to nanocrystalline phases by changing hydrogen dilution ratio R, deposition gas pressure, and RF power. Single junction a-Si:H solar cells were made using these materials as the intrinsic layers in the structure of n-i-p type on ZnO/Ag/stainless steel substrates. Light-induced degradations in the photovoltaic parameters were characterized on these cells after 1 Sun solar illumination for 150 h. The stabilized efficiencies were compared in conjunction with the structures in the intrinsic layers, which were revealed by high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrometry (FTIR). It was found that the solar cells incorporated protocrystalline intrinsic layer as the i-layer give a better initial efficiency, while solar cells made from nanostructured i-layers have a better stability of ∼7% degradation against light soaking, as a result, both have nearly the same final stabilized efficiency. The best device stabilized efficiency reaches ∼10.2% (0.25 cm2, AM1.5G) for the intrinsic layer deposited at a high pressure of 2 Torr.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2155-2159
نویسندگان
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