Photoelectric features of vacuum-deposited a-Si:H/Alq3 blends

Using three electrode vacuum system for glow discharge of 5% SiH4 + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10−11-10−3 Ω−1 cm−1 or 10−11 -10−8 Ω−1 cm−1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq3) have been vacuum-deposited by simultaneous glow discharge of 5% SiH4 + 95 % Ar gas mixture and thermal co-evaporation of Alq3. Photoluminescence spectrum of a-Si:H/Alq3 blend coincident with one of Alq3 was observed at room temperature.