کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1484662 | 1510525 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photocapacitance measurements in irradiated a-Si:H based detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photocapacitance measurements were performed on amorphous silicon p-i-n detectors before and after particle irradiation with 1.5Â MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning laser beam. We monitored the transient capacitance after applying short laser pulses to deduce trap energies of 0.64Â eV. Photocapacitance measurements as a function of the applied bias, the measurement frequency up to 1Â MHz, and the wavelength of laser light are discussed. The reduction in photocapacitance signal and the shift of the cut-off frequency after ion bombardment are correlated with the change in transport properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2176-2180
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19â25, 1 May 2008, Pages 2176-2180
نویسندگان
R. Schwarz, U. Mardolcar, Y. Vygranenko, M. Vieira, C. Casteleiro, P. Stallinga, H. Gomes,