کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1484687 | 1510525 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies](/preview/png/1484687.png)
In order to contribute to the understanding of the optoelectronics properties of hydrogenated nanocrystalline silicon films, a detailed study has been conducted. Structural analysis (infrared absorption and Raman scattering spectroscopy), combined with optical measurements spectroscopy (optical transmission, photothermal deflection spectroscopy and photoconductivity) were used to characterize the films. The samples were elaborated by radio-frequency magnetron sputtering of crystalline silicon target, under a hydrogen (70%) and Argon (30%) gas mixture, at three different total pressures (2, 3 and 4 Pa) and varying substrate temperature (100, 150 and 200 °C). The results clearly indicate that the films deposited at 2 Pa are amorphous, while for 3 and 4 Pa nanocrystalline structures are observed. These results are discussed in the framework of the existing models.
Journal: Journal of Non-Crystalline Solids - Volume 354, Issues 19–25, 1 May 2008, Pages 2291–2295