Spectroscopic parameters related to non-bridging oxygen hole centers in amorphous-SiO2

The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different γ- and β-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with a model in which they are assigned to a single defect. This finding allows the determination of spectroscopic parameters related to the optical transitions efficiencies. In this case the absorption oscillator strength at 4.8 eV is ∼200 times higher than that at 2.0 eV; while the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ∼3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme proposed in the literature for the non-bridging oxygen hole center. Moreover, they account for the excitation → luminescence pathways occurring after UV and visible absorption.