کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1485975 | 991675 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We analyzed the amorphous-crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 °C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t2 dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the μc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured Vg = 7.2 Ã 10â3 μm/min is a direct consequence of the low annealing temperature applied (250 °C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si-H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the μc-Si:H films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issue 3, 1 March 2006, Pages 281-284
Journal: Journal of Non-Crystalline Solids - Volume 352, Issue 3, 1 March 2006, Pages 281-284
نویسندگان
M. Rojas-López, A. Orduña-DÃaz, R. Delgado-Macuil, V.L. Gayou, R.E. Pérez-Blanco, A. Torres-Jacome, J. Olvera-Hernández,