Influence of compositional and structural changes on hydrogen bonding in silicon and silicon-germanium alloys

Hydrogen bonding in amorphous silicon and silicon-germanium alloys is investigated using Raman and gas effusion measurements. Special emphasis is given to the influence of structural changes on H bonding that occur in the cause of hydrogen effusion measurements. The data show that the analysis of the effusion spectra in terms of a hydrogen density-of-states distribution delivers reliable results for amorphous semiconductors.