کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486340 | 1510556 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin films
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کلمات کلیدی
81.15.GhMicrocrystallinity52.65.−y - 52.65.-y52.70.−m - 52.70. متر81.15.−z - 81.15.-ZThin film transistors - ترانزیستورهای فیلم نازکPlasma deposition - رسوب پلاسماCrystal growth - رشد کریستالSolar cells - سلول های خورشیدیsilicon - سیلیسیم Raman spectroscopy - طیف سنجی رامانPhotovoltaics - فتوولتاییکNucleation - هستهRaman scattering - پراکندگی رامان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An investigation of the relative importance of H atoms and ions to the transition from amorphous to microcrystalline silicon growth was performed by applying in situ plasma diagnostics and a 2D simulator of SiH4/H2 discharges. The growth transition was achieved by reducing the % SiH4 in the SiH4/H2 discharges while keeping all the other plasma parameters constant. The distribution of the main species in the discharge space, as well as the flux of H atoms and ions per monolayer and the energy transferred by each to the growing film surface, was estimated from the simulation results. H atoms flux was found to be much higher compared to ions but the total amount of energy transferred from both H atoms and ions was found to be much lower than the activation energy required for crystallization of stable a-Si:H films with low H-content. These results support the theory that in the present conditions the formation of microcrystals proceeds via the initial growth of an unstable a-Si:H with high H content, which reduces significantly the energy barrier for crystallization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9â20, 15 June 2006, Pages 1049-1054
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9â20, 15 June 2006, Pages 1049-1054
نویسندگان
B. Lyka, E. Amanatides, D. Mataras,