کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1486385 1510556 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films
چکیده انگلیسی
The aim of the present work is to provide the complex study of the mechanical properties of p-doped a-Si:H and a-SiC:H thin films prepared under different plasma conditions. For the investigation of the samples we used mainly the continuous depth sensing indentation technique (DSI), pin-on-disc test and internal stress measurement. The morphology of the thin film surface and the indentation prints are studied using optical microscopy, scanning electron microscopy (SEM) and topography mode of atomic force microscopy (AFM). The dependence of the mechanical parameters upon the deposition conditions were compared with the optoelectronic properties of studied films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 352, Issues 9–20, 15 June 2006, Pages 1238-1241
نویسندگان
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