Resistive switching characteristics of ZnO/a-TiO2 bilayer film fabricated on PET/ITO transparent and flexible substrates

• Amorphous TiO2 resistive switching device was formed by ALD with ZnO as a blocking layer.
• XPS spectra and depth profile were thoroughly investigated to verify the chemical composition of the films.
• Bipolar resistive switching with a good uniformity and long retention time was confirmed without using any electrical forming process.
• The conduction mechanism of the flexible device was thoroughly investigated and analyzed based on the filamentary theory.

Resistance random access memory consisting of ZnO/TiO2/Cu structure is demonstrated on a flexible and transparent PET/ITO substrate. To improve cell to cell uniformity, amorphous TiO2 fabricated by atomic layer deposition is used for resistive switching material with ZnO film as a blocking layer. XRD, SEM and AFM measurements were used to analyze the composition and structure of the ZnO/TiO2 films. XPS spectra and depth profile of the ZnO/TiO2 structure were thoroughly investigated to verify the chemical composition of the films. Resistive switching characteristics were measured and conduction mechanism was analyzed according to above analysis.

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