Ultra-low reflection loss for silicon nanowire-array-textured based photovoltaic devices

• Si-NW arrays on pyramid surface show the lowest reflectivity of ∼1.11% with an aspect ratio of ∼5.4.
• A photovoltaic characteristic of the PCE shows ∼10.26% with a Jsc of 28.2 mA/cm2 and a Voc of 540 mV.
• The PCE shows a dependence on Rsh while the Rs and the NWs aspect ratio are below 2.41 Ω and 10.

A two-step, metal-assisted, electroless etching technique based on the sputtering of silver particles is described, using phosphorus silicate glass, doping, and screen printing processes to fabricate photovoltaic devices. Si-NW arrays on pyramid surfaces show a low reflectivity of ∼1.11%, while the average length of the Si-NW arrays is ∼375 nm, with an aspect ratio of ∼5.4. Superior photovoltaic characteristics of the PCE (∼10.26%) with a Jsc of 28.2 mA/cm2 and a Voc of 540 mV are achieved. Power conversion efficiency shows a dependence on shunt resistance while the series resistance and the NWs aspect ratio are respectively below 2.41 Ω and 10.

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