کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1486972 | 1510693 | 2016 | 4 صفحه PDF | دانلود رایگان |
• The impact of Ge + C co-implantation on dopant diffusion was investigated.
• DIBL and VTH variation was improved by Ge + C co-implantation.
• The VTH mismatch and the write characteristics were improved in the DRAM device.
In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.
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Journal: Materials Research Bulletin - Volume 82, October 2016, Pages 22–25