Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)

• We have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO.
• ZnO doping improved the electrical parameters of MoS2 transistor (Ion↑, μFE↑, n↑).
• The reduction of ZnO doping effect (ΔVTH: ∼75% ↓) was observed in air.
• The highest photoresponsivity of ZnO-doped MoS2 photodetector was 3.18 × 103 A/W.
• The highest detectivity of ZnO-doped MoS2 photodetector was 5.94 × 1012 Jones.

In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (ID–VG with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion↑, μFE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔVTH of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 103 A/W) and detectivity (5.94 × 1012 Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.

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