Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

• First report on Sb + F doped ZnO thin films prepared by a chemical method.
• Survey on “a cation + F” doped ZnO film is included to support the discussion.
• Remarkably reduced resistivity is achieved by a low-cost simple chemical method.
• PL, SEM, EDAX, XPS studies support discussion on TCO properties.

By adding fluorine, an anionic co-dopant with antimony, a cationic dopant, Sb + F doped ZnO films are prepared using a simplified spray technique and the effect of fluorine concentration (0, 5, 10 and 15 at.%) on electrical, optical, structural and surface morphological properties are studied. The results show that the resistivity of ZnO:Sb:F film decreases gradually with the increase in F doping level, reaches a minimum value of 7.27 × 10−3 Ωcm at 10 at.% and starts increasing thereafter. The possible mechanisms for this variation in resistivity are addressed. The optical transmittance slightly improves due to F doping. The surface morphological studies reveal that the shape and size of the grains are affected remarkably by Sb doping but not affected appreciably by the additional F doping. The XRD, XPS and EDAX analyses confirm the formation of hexagonal wurtzite ZnO structure and the presence of the expected elements in the final product.

XPS survey spectrum of Sb (2 at.%) +F(10 at.%) co-doped ZnO thin films.Figure optionsDownload as PowerPoint slide