کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1487068 | 1510692 | 2016 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical characteristics of multiple layered InGaN quantum wells on GaN nanowalls grown on Si (111) substrate Optical characteristics of multiple layered InGaN quantum wells on GaN nanowalls grown on Si (111) substrate](/preview/png/1487068.png)
• GaN nanowall crystals were grown on Si substrate using MBE.
• In the low N/Ga flux ratio, GaN nanopillars and nanowalls were mixed.
• The InGaN MQWs were formed on the various N/Ga flux ratios of GaN nanowalls.
• The PL emissions originated from the InGaN MQWs were observed.
• Intensity ratio at room temperature and 8 K increased as deceasing N/Ga ratio.
GaN nanowall crystals and InGaN multiple quantum wells (MQWs) were grown on Si (111) substrate using molecular beam epitaxy. In high N/Ga flux ratio, dense two dimensional network GaN nanowall structures were grown with small pores. The continuity of GaN nanowall structures was decreased as decreasing the N/Ga flux ratio. In the N/Ga flux ratio of 50, nanopillars and nanowalls were mixed. The InGaN MQWs were formed on the GaN nanowall crystals which were grown in the various N/Ga flux ratios. The strong photoluminescence originated from the InGaN MQWs on GaN nanowall crystals around a wavelength of 400 nm was observed at the temperatures from 8 K to 300 K (room temperature). The ratios of the photoluminescence intensities at 8 K and the room temperature were measured for the InGaN MQWs. The higher ratio was obtained as decreasing the N/Ga flux ratio of the GaN nanowall crystal growth.
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Journal: Materials Research Bulletin - Volume 83, November 2016, Pages 563–567