Influence of Al content on the properties of ternary Al2xIn2−2xO3 alloy films prepared on YSZ (1 1 1) substrates by MOCVD

• Al2xIn2−2xO3 films were prepared on the Y-stabilized ZrO2 (1 1 1) substrates by MOCVD at 700 °C.
• A phase transition from the bixbyite In2O3 structure to the amorphous structure was observed.
• The lowest resistivity of 4.7 × 10−3 Ω cm was obtained for the Al0.4In1.6O3 film.
• Tunable optical band gap from 3.7 to 4.8 eV was obtained.

The ternary Al2xIn2−2xO3 films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO2 (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In2O3 structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10−3 Ω cm, a carrier concentration of 1.4 × 1020 cm−3 and a Hall mobility of 9.8 cm2 v−1 s−1 were obtained for the sample with x = 0.2. The average transmittances for the Al2xIn2−2xO3 films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.

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