Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

• Cu2ZnSnS4 (CZTS) thin film was grown by reactive co-sputtering.
• The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy.
• C-AFM current flow mainly through grain boundaries rather than grain interiors.
• SKPM indicated higher potential along the GBs compared to grain interiors.
• The SCM explains that charge separation takes place at the interface of grain and grain boundary.

Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.

Experimental setup for conducting AFM (C-AFM).Figure optionsDownload as PowerPoint slide