Gamma ray induced thermoluminescence properties of Eu3+ doped SnO2 phosphor

• TL properties of SnO2:Eu3+ were reported upon γ-ray irradiation.
• Effect of doping, irradiation dose and heating rate on TL properties were studied in detail.
• The kinetic parameters associated with TL were calculated for first time in SnO2:Eu3+.
• Existence of second-order kinetics indicates the occurrence of retrapping phenomena.
• Retrapping of electrons at deep traps occurred due to thermal energy stimulation.

This paper reports the thermoluminescence properties of Eu3+ doped SnO2 phosphors synthesized by combustion method. The thermoluminescence (TL) studies were carried out after irradiating the sample by γ-rays in the dose range 100 Gy to 1 KGy. The glow curves of γ-irradiated phosphors were resolved into two peaks, one centred at 116 °C and other at 300 °C. Intensity of the glow peak increases linearly in the studied dose range of γ-rays. Kinetic parameters such as order of kinetics, trap depth and frequency factor associated with the glow peak were calculated by various glow curve methods.

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