کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1487379 | 1510699 | 2016 | 10 صفحه PDF | دانلود رایگان |
• Reduction of oxide substrates allows to fabricate thermoelectric alloys.
• Final composition and microstructure can be controlled by parameters of reduction.
• Thermoelectric properties of fabricated alloys differ depending on reduction temperature.
• The highest ZT at 35 °C 15Sb2O3-10Bi2O3-75TeO2 compound reduced at 340 °C for 10 h.
• At 350 °C a value of ZT = 0.8 was reached by TAGS85 reduced twice at 400 °C for 10 h.
A novel method for thermoelectric materials fabrication using a reduction of oxide precursors in hydrogen was reported. On the example of Bi–Sb, Bi–Sb–Te and Te–Ag–Ge–Sb compounds it was shown that this simple and easy method is suitable for fabrication of two-, three- and even multicomponent thermoelectric materials. It allows controlling a composition, microstructure and even type a of electrical charge carriers. As a result of reduction of oxide precursors a layered structure with an average thickness of layers equal tens of nanometers was formed. At the near-room temperature the best material with a figure of merit (ZT) close to 0.4 was Bi0.8Sb1.2Te3Ox reduced at 340 °C for 10 h. At 350 °C a value of ZT = 0.8 was reached by the (GeTe)0.85(AgSbTe2)0.15 (TAGS85) sample reduced twice at 400 °C for 10 h.
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Journal: Materials Research Bulletin - Volume 76, April 2016, Pages 195–204