Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

• Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied.
• SdH oscillations of transverse and longitudinal magnetoresistance are examined.
• Mechanisms of electron scattering are determined
• Main crystal parameters of InSb whiskers are determined.

The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 Т−1, cyclotron effective mass of electrons mс ≈ 0.14mо, concentration of charge carriers 2.3 × 1017 сm−3, g-factor g* ≈ 30 and Dingle temperature ТD = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 1017 cm−3, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

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