Ablation of (GeS2)0.3(Sb2S3)0.7 glass with an ultra-violet nano-second laser

• The interaction of (GeS2)0.3(Sb2S3)0.7 bulk glass and film with UV nanosecond laser.
• Ablation process, topography of crater and structure of the material were studied.
• Ablation threshold fluencies changed with the spot diameter and number of pulses.
• The photo-thermal expansion of the material occurred for low laser fluency.
• Laser direct writing process applicable for fabrication of passive optical elements.

The results of an experimental study of the laser ablation of bulk and thin films of a GeSbS chalcogenide glass using UV nanosecond pulses are reported. The response of the samples to illumination conditions was studied through the use of atomic force spectroscopy, digital holographic microscopy, Raman scattering and scanning electron microscopy. The multi-pulse ablation thresholds were determined for both the bulk and thin film samples for varying number of pulses and illuminated spot diameter. The possible application of direct laser writing into the bulk and thin films of this material is presented.

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