Microstructure and electrical properties of Na0.5Bi0.5(Ti0.98Zr0.02)O3 thin film deposited on indium tin oxide/glass substrate

• NBTZr deposited on ITO/glass under O2 exhibits a phase-pure perovskite structure.
• NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm2.
• At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58.
• At 100 kHz, the ϵr and tanδ are 205 and 0.092, respectively.

Na0.5Bi0.5(Ti0.98Zr0.02)O3 (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O2 atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (Pr) of 11.5 μC/cm2 and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.

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