Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

• Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering.
• Effects of oxygen partial pressure on the properties of thin films were investigated.
• For SnO2:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10−4 Ω cm.

Nitrogen-doped tin oxide (SnO2:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO2:N films were amorphous state, and O/Sn ratios of SnO2:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO2:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO2:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO2:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10−4 Ω cm.

The best SnO2:N TCO film: about 80% transmittance and 9.1 × 10−4 Ω cm.Figure optionsDownload as PowerPoint slide