کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1487766 | 1510707 | 2015 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors](/preview/png/1487766.png)
• No reports about BaZnSnO thin film using solution process.
• BaZnSnO thin film transistor (TFT) was firstly fabricated.
• BaZnSnO-TFT shows a acceptable performace.
• Influence of Ba content on BaZnSnO-TFT.
A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm2/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 106, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.
This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process.Figure optionsDownload as PowerPoint slide
Journal: Materials Research Bulletin - Volume 68, August 2015, Pages 22–26