Memristive behavior and forming mechanism of homogeneous TiOx device

• We fabricated a homogeneity TiOx device with excellent memristive behavior.
• The double-interface conductive filament model is suggested.
• The calculated I–V curve is in agreement with the experimental results.
• The switching voltage could be adjusted by selecting the proper electrode materials.

A homogeneous titanium oxide device is fabricated by Molecular Beam Epitaxy and the excellent memristive behavior could be observed. The resistance ratio between high resistance state and low resistance state increases as the thickness of titanium oxide or the oxygen content reduces. The forming voltage is lower than the previous report. Based on the experimental results, we suggest a double-interface conductive filament model and calculate the current–voltage curve of the device in agreement with experimental measurements. The result indicates that the forming voltage of the device will rise with increasing of the chemical potential differences across the two interfaces. In other words, the switching voltage could be adjusted by selecting a proper electrode and oxide materials.

Figure optionsDownload as PowerPoint slide